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| Three Phase Rectifier Bridge Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSD 82 IdAV VRRM = 88 A = 800-1800V PSD PSD PSD PSD PSD 82/08 82/12 82/14 82/16 82/18 Symbol IdAVM IFSM Test Conditions TC = 110 C, TVJ = 45 C VR = 0 TVJ = TVJM VR = 0 TVJ = 45 C VR = 0 TVJ = TVJM VR = 0 (per module) Maximum Ratings 88 750 820 670 740 2800 2800 2250 2250 A A A A A As As As As C C C V V Nm Nm g Features t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i dt 2 * * * * * * Package with screw terminals Isolation voltage 3000 V Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications TVJ TVJM Tstg VISOL Md -40... + 150 150 -40... + 125 50/60 Hz, RMS t = 1 min IISOL 1 mA Mounting torque t=1s (M5) 2500 3000 5 5 160 * * * * Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Weight Terminal connection torque (M5) typ. * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Symbol IR VF VTO rT RthJC RthJK ds dA a Test Conditions VR = VRRM, TVJ = 25C VR = VRRM, TVJ = TVJM IF = 150 A, TVJ = 25 C For power-loss calculations only per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration Characteristic Value 0.3 5 1.6 0.8 5 1.1 0.183 1.52 0.253 10.0 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s Package style and outline Dimensions in mm (1mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 200 [A] 150 100 50 IF 0 Tvj = 150C Tvj = 25C 2 0.5 1 1.5 VF [V] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) Fig. 4 Power dissipation versus direct output current and ambient temperature K/W Fig.5 Maximum forward current at case temperature 2 Z thJK Z thJC 1.5 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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